General Purpose and Low VCE(sat) Transistors | MSD601-R

NPN Bipolar Transistor

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Overview

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SC-59 package, which is designed for lower power surface mount applications.

  • High hFE, 210-460
  • Low VCE(sat), < 0.5 V
  • Available in 8 mm, 7-inch/3000 Unit Tape and Reel
  • Pb-Free Packages are Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MSD601-RT1G

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CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

3000

N

NPN

General Purpose

0.5

0.1

50

60

7

-

-

210

340

-

0.2

$0.0215

More Details

NSVMSD601-RT1G

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Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

3000

N

NPN

General Purpose

0.5

0.1

50

60

7

-

-

210

340

-

0.2

$0.0463

More Details

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Reliability Data

Die Related Summary Data

Device: MSD601-RT1G

Equivalent to wafer fab process: SST

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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