General Purpose and Low VCE(sat) Transistors | MMBT489

High Current NPN Bipolar Transistor

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Overview

The High Current NPN Bipolar Transistor is designed for Load Management in Portable Applications.

  • Power Management
  • Low Power Switch

  • High Current Capability (2A)
  • Pb-Free Package is Available

Tools and Resources

Product services, tools and other useful resources related to MMBT489

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MMBT489LT1

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Obsolete

CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

235

REEL

3000

N

NPN

General Purpose

0.2

1

30

-

-

-

-

300

900

100

0.31

Price N/A

More Details

MMBT489LT1G

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CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

3000

N

NPN

General Purpose

0.2

1

30

50

5

1.1

1.1

300

900

100

0.31

$0.0787

More Details

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Reliability Data

Die Related Summary Data

Device: MMBT489LT1G

Equivalent to wafer fab process: SST

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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