General Purpose and Low VCE(sat) Transistors | MJF47

High Voltage NPN Bipolar Power Transistor

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Overview

The High Voltage Bipolar Power NPN Transistor is designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

  • Electrically Similar to the Popular TIP47
  • 250 VCEO(sus)
  • 1 A Rated Collector Current
  • No Isolating Washers Required
  • Reduced System Cost
  • UL Recognized, File #E69369, to 3500 VRMS Isolation
  • Pb-Free Package is Available

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MSL Temp (°C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

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MJF47

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3 FullPak

221D-03

NA

0

TUBE

50

N

NPN

General Purpose

1

1

250

-

-

-

-

30

150

10

28

Price N/A

More Details

MJF47G

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Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221D-03

NA

0

TUBE

50

N

NPN

General Purpose

1

1

250

350

5

-

1.5

30

150

10

28

$0.6161

More Details

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Reliability Data

Die Related Summary Data

Device: MJF47G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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