General Purpose and Low VCE(sat) Transistors | MJF45H11

PNP Bipolar Power Transistor

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Overview

The Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJF44H11 (NPN) and MJF45H11 (PNP) are complementary devices.

  • Low Collector-Emitter Saturation Voltage--VCE(sat) = 1.0 V (Max) @ 8.0 A
  • Fast Switching Speeds
  • Complementary Pairs Simplifies Designs
  • Pb-Free Packages are Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJF45H11

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221D-03

NA

0

TUBE

50

N

PNP

General Purpose

1

10

80

-

-

-

-

60

-

-

50

Price N/A

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MJF45H11G

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Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221D-03

NA

0

TUBE

50

N

PNP

General Purpose

1

10

80

-

5

1.5

-

60

-

-

50

$0.6401

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Reliability Data

Die Related Summary Data

Device: MJF45H11G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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