General Purpose and Low VCE(sat) Transistors | MJE5852

8.0 A, 400 V PNP Bipolar Power Transistor

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Overview

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.

  • Switching Regulators
  • Inverters
  • Solenoid and Relay Drivers
  • Motor Controls
  • Deflection Circuits

  • Pb-Free Packages are Available

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Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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fT Min (MHz)

PTM Max (W)

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MJE5852

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

PNP

General Purpose

2

8

400

-

-

-

-

15

-

-

80

Price N/A

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MJE5852G

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Active

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

PNP

General Purpose

2

8

400

-

6

1.5

-

15

-

-

80

$1.6428

More Details

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Reliability Data

Die Related Summary Data

Device: MJE5852G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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