16 A, 160 V NPN Bipolar Power Transistor

Lifetime

Overview

The Bipolar Power Transistor is designed for use in high power audio amplifier applications and high voltage switching regulator circuits. The MJE4343 and MJE4353 are complementary devices

  • High Collector-Emitter Sustaining Voltage -

    VCEO(sus) = 160 Vdc - NPN - MJE4343 PNP - MJE4353
  • High DC Current Gain - @ IC = 8.0 Adc
    hFE = 35 (Typ)
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 2.0 Vdc (Max) @ IC
    = 8.0 Adc
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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2

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJE4343

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Obsolete

CAD Model

Pb

A

H

P

SOT-93-3 / TO-218-3

NA

0

TUBE

30

N

-

General Purpose

3.5

16

-

-

-

-

-

15

-

1

125

Price N/A

More Details

MJE4343G

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Lifetime

CAD Model

Pb

A

H

P

TO-247

NA

0

TUBE

30

N

NPN

General Purpose

3.5

16

160

160

7

3.9

3.9

15

-

1

125

$2.4619

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