General Purpose and Low VCE(sat) Transistors | MJE3439

NPN Bipolar Power Transistor

Obsolete

Datasheet

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Overview

The NPN Bipolar Power Transistor is designed for use in line-operated equipment requiring high fT.

  • High DC Current Gain
    hFE = 40-160 @ IC
    hFE = 20 mAdc
  • Current Gain Bandwidth Product -
    fT = 15 MHz (Min) @ IC
    fT = 10 mAdc
  • Low Output Capacitance
    Cob = 10 pF (Max) @ f
    Cob = 1.0 MHz
  • Pb-Free Package is Available

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJE3439

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

0.5

0.3

350

-

-

-

-

15

200

15

15

Price N/A

More Details

MJE3439G

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

0.5

0.3

350

450

5

1.3

0.8

15

200

15

15

Price N/A

More Details

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Reliability Data

Die Related Summary Data

Device: MJE3439G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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