MJE243: 4.0 A, 100 V NPN Bipolar Power Transistor

Datasheet: Complementary Silicon Power Plastic Transistors
Rev. 16 (91kB)
Product Overview
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Product Change Notification
The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.
Features
 
  • High Collector-Emitter Sustaining Voltage -
    VCEO(sus) = 100 Vdc (Min) MJE243, MJE253
  • High DC Current Gain @ IC = 200 mAdc
    hFE = 40-200
    hFE = 40-120 - MJE243, MJE253
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
  • High Current Gain Bandwidth Product -
    fT = 40 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakages
    ICBO = 100 nAdc (Max) @ Rated VCB
  • Pb-Free Packages are Available
Technical Documentation & Design Resources
Simulation Models (4) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Case Outlines
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
MJE243G Active
Pb-free
Halide free
MJE243 TO-225-3 77-09 NA Bulk Box 500 $0.1804
MJE243 Obsolete 
MJE243 TO-225-3 77-09 NA Bulk Box 500  
Market Leadtime (weeks) : 8 to 12
FutureElectronics   (2020-08-19 00:00) : >1K
PandS   (2020-09-14 00:00) : >1K
Avnet   (2020-08-19 00:00) : >1K
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Polarity
Type
VCE(sat) Max (V)
IC Cont. (A)
VCEO Min (V)
VCBO (V)
VEBO (V)
VBE(sat) (V)
VBE(on) (V)
hFE Min
hFE Max
fT Min (MHz)
PTM Max (W)
Package Type
MJE243G  
 $0.1804 
Pb
H
 Active   
NPN
General Purpose
0.6
4
100
100
7
1.8
1.5
40
180
40
15
TO-225-3
Case Outlines
77-09   
Packages
MJE243: 4.0 A, 100 V NPN Bipolar Power Transistor
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