5.0 A, 25 V PNP Bipolar Power Transistor

Last Shipments

Overview

The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.

  • Collector-Emitter Sustaining Voltage -
    VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain -
    hFE = 70 (Min) @ IC = 500 mAdc
    hFE = 45 (Min) @ IC = 2.0 Adc
    hFE = 10 (Min) @ IC = 5.0 Adc
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc
  • High Current-Gain - Bandwidth Product -
    fT = 65 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage -
    ICBO = 100 nAdc @ Rated VCB
  • Pb-Free Packages are Available

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3

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJE210

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Obsolete

CAD Model

Pb

A

H

P

TO-225-3

NA

0

BLKBX

500

N

-

General Purpose

1.8

5

-

-

-

-

-

45

180

65

15

Price N/A

More Details

MJE210G

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Last Shipments

CAD Model

Pb

A

H

P

TO-225-3

NA

0

BLKBX

500

N

PNP

General Purpose

1.8

5

40

-

8

2.5

1.6

45

180

65

15

Price N/A

More Details

MJE210TG

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Obsolete

CAD Model

Pb

A

H

P

TO-225-3

NA

0

BLKBX

50

N

PNP

General Purpose

1.8

5

25

-

-

-

-

45

180

65

15

Price N/A

More Details

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