General Purpose and Low VCE(sat) Transistors | MJD50(LEGACY FAIRCHILD)

1.0 A, 400 V High Voltage NPN Bipolar Power Transistor

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Overview

1.0 A, 400 V High Voltage NPN Bipolar Power Transistor

  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • This Device is Pb-Free and are RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJD50TF

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Lifetime

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2000

N

NPN

General Purpose

1

1

400

500

5

-

1.5

30

150

10

15

$0.2031

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Reliability Data

Die Related Summary Data

Device: MJD50TF

Equivalent to wafer fab process: TM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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