General Purpose and Low VCE(sat) Transistors | MJD45H11(LEGACY FAIRCHILD)

8 A, 80 V PNP Power Bipolar Junction Transistor

Obsolete

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Overview

The Power Bipolar Junction Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.

  • Audio amplification

  • Audio Amplifiers

  • Electrically Similar to Popular D44H/D45H Series
  • Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
  • Fast Switching Speeds
  • Complementary Pairs Simplifies Designs
  • These Devices are Pb-Free and are RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJD45H11TF

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

DPAK-3

369AK

1

260

REEL

2000

N

PNP

General Purpose

1

8

80

-

5

1.5

-

60

-

-

20

Price N/A

More Details

MJD45H11TM

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

DPAK-3

369AK

1

260

REEL

2500

N

PNP

General Purpose

1

8

80

-

5

1.5

-

60

-

-

20

Price N/A

More Details

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Reliability Data

Die Related Summary Data

Device: MJD45H11TM

Equivalent to wafer fab process: TM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TM

21

1953855815

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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