5.0 A, 25 V PNP Bipolar Power Transistor

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Overview

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.

  • Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc
    = 45 (Min) @ IC = 2 Adc
    = 10 (Min) @ IC = 5 Adc
  • Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc= 0.75 Vdc (Max) @ IC = 2.0 Adc
  • High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free and are RoHS Compliant
  • MJD200 is the complementary NPN device

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJD210G

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CAD Model

Pb

A

H

P

DPAK-3

1

260

TUBE

75

N

PNP

General Purpose

1.8

5

25

40

8

2.5

1.6

45

180

3

12.5

$0.2108

More Details

MJD210RLG

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CAD Model

Pb

A

H

P

DPAK-3

1

260

REEL

1800

N

PNP

General Purpose

1.8

5

25

40

8

2.5

1.6

45

180

3

12.5

$0.2133

More Details

MJD210T4G

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Active

CAD Model

Pb

A

H

P

DPAK-3

1

260

REEL

2500

N

PNP

General Purpose

1.8

5

25

40

8

2.5

1.6

45

180

3

12.5

$0.198

More Details

NJVMJD210T4G

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Active

CAD Model

Pb

A

H

P

DPAK-3

1

260

REEL

2500

N

PNP

General Purpose

1.8

5

25

40

8

2.5

1.6

45

180

3

12.5

$0.3136

More Details

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