General Purpose and Low VCE(sat) Transistors | MJ802

30 A, 90 V NPN Bipolar Power Transistor

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Overview

This transistor is for use as an output device in complementary audio amplifiers to 100¿Watts music power per channel.

  • High DC Current Gain - hFE = 25-100 @ IC = 7.5 A
  • Excellent Safe Operating Area
  • Complement to the PNP MJ4502
  • Pb-Free Package is Available

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MSL Temp (°C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJ802G

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CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

Y

NPN

General Purpose

0.8

30

90

100

4

1.3

1.3

25

100

2

200

$4.0778

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Reliability Data

Die Related Summary Data

Device: MJ802G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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