General Purpose and Low VCE(sat) Transistors | MBT6429DW1

NPN Bipolar Small Signal Transistor

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Overview

The Dual NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88, which is designed for low power surface mount applications.

  • Pb-Free Package is Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MBT6429DW1T1

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

235

REEL

3000

N

Dual NPN

General Purpose

0.6

0.2

45

-

-

-

-

500

1250

100

0.15

Price N/A

More Details

MBT6429DW1T1G

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Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

N

Dual NPN

General Purpose

0.6

0.2

45

55

6

-

0.56

500

1250

100

0.15

$0.0268

More Details

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Reliability Data

Die Related Summary Data

Device: MBT6429DW1T1G

Equivalent to wafer fab process: SST

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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