General Purpose and Low VCE(sat) Transistors | MBT3906DW3

Dual PNP Bipolar Transistor

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Overview

The Dual PNP Bipolar Transistor is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium.

  • TBD
  • TBD
  • hFE, 100-300
  • Low VCE(sat), ≤ 0.4 V
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • Available in 8 mm, 7-inch/3,000 Unit Tape and Reel
  • Device Marking: MBT3906DW1T1 = A2
  • Pb-Free Package is Available
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

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SMBT3906DW3T1G

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Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

No

Dual PNP

General Purpose

0.4

0.2

40

40

5

0.65

-

100

300

250

0.15

2.00 x 2.10 x 1.10

$0.0849

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Reliability Data

Die Related Summary Data

Device: SMBT3906DW3T1G

Equivalent to wafer fab process: SST

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

1

13739524368

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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