General Purpose and Low VCE(sat) Transistors | KSD363

NPN Epitaxial Silicon Transistor

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Overview

  • This product is general usage and suitable for many different applications.

  • Collector-Base Voltage: VCBO= 300 V
  • Collector Current: IC= 6 A
  • Collector Dissipation: PC= 40 W (TC=25°C)B/W TV Horizontal Deflection Output

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSD363RTU

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Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

NPN

General Purpose

1

6

120

300

8

1.5

-

40

80

10

40

$0.3197

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KSD363YTU

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Similar Products
CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

NPN

General Purpose

1

6

120

300

8

1.5

-

120

240

10

40

Price N/A

More Details

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Reliability Data

Die Related Summary Data

Device: KSD363RTU

Equivalent to wafer fab process: TM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TM

21

1953855815

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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