General Purpose and Low VCE(sat) Transistors | KSD261

NPN Epitaxial Silicon Transistor

Obsolete

Datasheet

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Overview

  • This product is general usage and suitable for many different applications.
  • Complement to KSA643
  • Collector Dissipation : PC =500mW
  • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)Low Frequency Power Amplifier

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Reliability Data

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

Reference Price

KSD261CGTA

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Obsolete

View__CAD

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

No

NPN

General Purpose

0.4

0.5

20

40

5

-

-

200

400

-

0.5

Price N/A

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Reliability Data

Die Related Summary Data

Device: KSD261CGTA

Equivalent to wafer fab process: SST

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

1

13739524368

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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