General Purpose and Low VCE(sat) Transistors | KSD2012

NPN Epitaxial Silicon Transistor

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Overview

  • This product is general usage and suitable for many different applications.

  • Low Frequency Power Amplifier
  • Complement to KSB1366
  • Low Frequency Power Amplifier

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSD2012GTU

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Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

N

NPN

General Purpose

1

3

60

60

7

-

1

150

320

3

25

$0.3891

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Reliability Data

Die Related Summary Data

Device: KSD2012GTU

Equivalent to wafer fab process: TM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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