General Purpose and Low VCE(sat) Transistors | KSD1692

NPN Silicon Darlington Transistor

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Overview

  • This product is general usage and suitable for many different applications.

  • High DC Current Gain
  • Low Collector Saturation Voltage
  • Built-in a Damper Diode at E-C
  • High Power Dissipation: PC= 1.3 W (Ta=25°C)

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Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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Reference Price

KSD1692YS

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CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

BLKBG

2000

Y

NPN

General Purpose

1.2

3

100

150

8

2

-

4000

12000

-

15

$0.276

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Reliability Data

Die Related Summary Data

Device: KSD1692YS

Equivalent to wafer fab process: TM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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