General Purpose and Low VCE(sat) Transistors | KSC5502DT

NPN Triple Diffused Planar Silicon Transistor

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Overview

  • This product is general usage and suitable for many different applications.

  • Wide Safe Operating Area
  • Built-in Free-Wheeling Diode
  • Suitable for Electronic Ballast
  • Small Variance in Storage Time
  • Two Package Choices: D-PAK or TO-220
  • High Voltage Power Switch Switching

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSC5502DTTU

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CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

NPN

General Purpose

1.5

2

600

1200

12

1.2

-

12

30

11

118.16

Price N/A

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Reliability Data

Die Related Summary Data

Device: KSC5502DTTU

Equivalent to wafer fab process: TM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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