General Purpose and Low VCE(sat) Transistors | KSC1009

NPN Epitaxial Silicon Transistor

Obsolete

Datasheet

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Overview

  • This product is general usage and suitable for many different applications.

  • High Collector-Base Voltage : VC=160V
  • Collector Current : I C =700mA
  • Collector Dissipation : PC =800mW
  • Complement to KSA709
  • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)High Voltage Amplifier

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSC1009YTA

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Obsolete

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CAD Model

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

N

NPN

General Purpose

0.7

0.7

140

160

8

1

-

120

240

30

0.8

Price N/A

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Reliability Data

Die Related Summary Data

Device: KSC1009YTA

Equivalent to wafer fab process: SST

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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