General Purpose and Low VCE(sat) Transistors | KSA1381

PNP Epitaxial Silicon Transistor

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Datasheet

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Overview

  • This product is general usage and suitable for many different applications.

  • High Voltage : VCEO = -300 V
  • Low Reverse Transfer Capacitance : Cre = 2.3 pF at VCB = -30 V
  • Excellent Gain Linearity for low THD
  • High Frequency: 150 MHz
  • Full thermal and electrical Spice models are available
  • Complement to 2SC3503/KSC3503

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Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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fT Min (MHz)

PTM Max (W)

Reference Price

KSA1381ESTU

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Last Shipments

CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

TUBE

1920

N

PNP

General Purpose

0.6

0.1

300

300

5

1

-

100

200

150

1.2

Price N/A

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Reliability Data

Die Related Summary Data

Device: KSA1381ESTU

Equivalent to wafer fab process: TM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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