General Purpose and Low VCE(sat) Transistors | FJPF13009

NPN Silicon Transistor

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Overview

The FJPF13009 is a 700 V 12 A NPN Silicon Epitaxial Planar Transistor. The FJPF13009 is available with multiple hFE bin classes for ease of design use. The FJPF13009 is designed for high speed switching applications which utilizes the industry standard TO-220F package offering flexibility in design and excellent Power Dissipation.

  • This product is general usage and suitable for many different applications.

  • High-Voltage Capability
  • High Switching Speed

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Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

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VEBO (V)

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VBE(on) (V)

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FJPF13009H1TU

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CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

N

NPN

Silicon Transistor

3

12

400

700

9

1.6

-

8

17

4

50

Price N/A

More Details

FJPF13009H2TU

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Last Shipments

Similar Products
CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

N

NPN

Silicon Transistor

3

12

400

700

9

1.6

-

15

28

4

50

Price N/A

More Details

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Reliability Data

Die Related Summary Data

Device: FJPF13009H1TU

Equivalent to wafer fab process: BM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BM

0

199667497

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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