General Purpose and Low VCE(sat) Transistors | FJP5555

NPN Silicon Transistor

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Overview

The FJP5555 is a 1050 V 5 A NPN Silicon Epitaxial Planar Transistor. The FJP5555 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent Power Dissipation.

  • This product is general usage and suitable for many different applications.

  • High-Voltage Capability
  • High Switching Speed
  • Wide Safe Operating Area

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Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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fT Min (MHz)

PTM Max (W)

Reference Price

FJP5555TU

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Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

NPN

Silicon Transistor

1.5

5

400

1050

14

1.2

-

20

40

-

75

$0.4281

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Reliability Data

Die Related Summary Data

Device: FJP5555TU

Equivalent to wafer fab process: TM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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