General Purpose and Low VCE(sat) Transistors | FJP2160D

ESBC Rated NPN Silicon Transistor

Last Shipments

Datasheet

Products

Similar Products

Overview

The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBC configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition switches. The power switch is designed to operate up to 1600 volts and up to 3amps while providing exceptionally low on-resistance and very low switching losses.
The ESBC switch is designed to be easy to drive using off-the-shelf power supply controllers or drivers. The ESBC MOSFET is a low-voltage, low-cost, surface mount device that combines low-input capacitance and fast switching, The ESBC configuration further minimizes the required driving power because it does not have Miller capacitance.
The FJP2160D provides exceptional reliability and a large operating range due to its square reverse-bias-safeoperating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors; it is not prone to static dv/dt failures.

  • Low Equivalent On Resistance
  • Very Fast Switch : 150KHz
  • Squared RBSOA : Up to 1600Volts
  • Avalanche Rated
  • Low Driving Capacitance, no Miller Capacitance (Typ 12pF Cap @ 200volts)
  • Low Switching Losses
  • Reliable HV switch : No False Triggering due to High dv/dt Transients.

Tools and Resources

Product services, tools and other useful resources related to FJP2160D

CAD Model

CAD Model

Material Composition

Product Change Notification

Reliability Data

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Sort by

Product Groups:

┗

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

FJP2160DTU

Loading...

Last Shipments

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

NPN

ESBC Silicon Transistor

0.75

2

800

1600

12

1.2

-

20

35

5

100

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.

Reliability Data

Die Related Summary Data

Device: FJP2160DTU

Equivalent to wafer fab process: SST

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

0

4654891639

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

New Search