General Purpose and Low VCE(sat) Transistors | FJP1943

PNP Epitaxial Silicon Transistor

Obsolete

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Overview

  • This product is general usage and suitable for many different applications.

  • High Current Capability: IC = -15A.
  • High Power Dissipation : 80watts.
  • High Fequency : 30MHz.
  • High Voltage : VCEO=-250V
  • Wide S.O.A for reliable operation.
  • Excellent Gain Linearity for low THD.
  • Complement to FJP5200
  • Full thermal and electrical Spice models are available.
  • Same transistor is also available in: -- TO264 package, 2SA1943/FJL4215 : 150 watts -- TO3P package, 2SA1962/FJA4213 : 130 watts -- TO220F package, FJPF1943 : 50 watts
  • High-Fidelity Audio Output Amplifier
  • General Purpose Power Amplifier

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Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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Reference Price

FJP1943RTU

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

PNP

General Purpose

3

15

230

230

5

-

1.5

55

160

30

80

Price N/A

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Reliability Data

Die Related Summary Data

Device: FJP1943RTU

Equivalent to wafer fab process: TM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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