General Purpose and Low VCE(sat) Transistors | FJE5304D

NPN Triple Diffused Planar Silicon Transistor

Lifetime

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Overview

  • This product is general usage and suitable for many different applications.

  • High-Voltage, High-Speed Power Switch Applications
  • Wide Safe Operating Area
  • Built-in Free-Wheeling diode
  • Suitable for Electronic Ballast Applications
  • Small Variance in Storage Time

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MSL Temp (°C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

FJE5304D

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Lifetime

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CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

BLKBG

2000

N

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High Voltage Fast-Switching Transistor

1.5

4

400

700

12

1.3

-

8

40

-

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FJE5304DTU

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Lifetime

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CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

TUBE

1920

N

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1.5

4

400

700

12

1.3

-

8

40

-

30

$0.3799

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Reliability Data

Die Related Summary Data

Device: FJE5304D

Equivalent to wafer fab process: TM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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