General Purpose and Low VCE(sat) Transistors | FJE3303

NPN Silicon Transistor Planar Silicon Transistor

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Overview

  • This product is general usage and suitable for many different applications.

  • High Voltage Capability
  • High Speed Switching
  • Suitable for Electronic Ballast and Switching Regulator

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Product services, tools and other useful resources related to FJE3303

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Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

FJE3303H1TU

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Last Shipments

CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

TUBE

1920

N

NPN

High Voltage Fast-Switching Power Transistor

3

1.5

400

700

9

1.2

-

8

16

4

20

Price N/A

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FJE3303H2TU

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Lifetime

CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

TUBE

1920

Y

NPN

High Voltage Fast-Switching Power Transistor

3

1.5

400

700

9

1.2

-

14

21

4

20

$0.3653

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Reliability Data

Die Related Summary Data

Device: FJE3303H1TU

Equivalent to wafer fab process: TM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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