General Purpose and Low VCE(sat) Transistors | FJB5555

NPN Silicon Transistor

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Overview

The FJB5555 is a 1050 V 5 A NPN Silicon Epitaxial Planar Transistor. The FJB5555 is designed for high speed switching applications which utilizes the industry standard surface mount TO-263 (D2PAK)package offering flexibility in design and excellent Power Dissipation.

  • High-Voltage Capability
  • High Switching Speed
  • Wide Safe Operating Area

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

FJB5555TM

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

REEL

800

N

NPN

Silicon transistor

1.5

5

400

1050

14

1.2

-

20

40

-

100

$0.7272

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Reliability Data

Die Related Summary Data

Device: FJB5555TM

Equivalent to wafer fab process: TM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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