General Purpose and Low VCE(sat) Transistors | EMX2DXV6

Dual NPN Bipolar Transistor

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Overview

This Dual NPN Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium.

  • Reduces Board Space

  • TBD

  • High hFE, 210-460 (Typical)
  • Low VCE(sat), < 0.5V
  • Pb-free Solder Plating
  • These are Pb-Free Devices

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

EMX2DXV6T1G

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Active

CAD Model

Pb

A

H

P

SOT-563

463A-01

1

260

REEL

4000

F

Dual NPN

General Purpose

0.4

0.1

50

60

7

0

0

120

560

0

0.357

Price N/A

More Details

EMX2DXV6T5G

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Similar Products
CAD Model

Pb

A

H

P

SOT-563

463A-01

1

260

REEL

8000

N

Dual NPN

General Purpose

0.4

0.1

50

60

7

-

-

120

560

-

0.357

Price N/A

More Details

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Reliability Data

Die Related Summary Data

Device: EMX2DXV6T5G

Equivalent to wafer fab process: SST

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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