General Purpose and Low VCE(sat) Transistors | ECH8102

Bipolar Transistor, -30V, -12A, Low VCE(sat), PNP Single ECH8

Obsolete

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Overview

ECH8102 is Bipolar Transistor, -30V, -12A, Low VCE(sat), PNP Single ECH8 for High-Current Switching Applications.

  • High-power IGBT/MOSFET gate drivers
  • DC-DC converters
  • Lamp drivers
  • Motor drivers

  • Adoption of FBET, MBIT process
  • Low collector-to-emitter saturation voltage
  • High allowable power dissipation
  • High current capacitance
  • High speed switching
  • Halogen free compliance
  • IECO is guaranteed for preventing reverse fl ow from the collector to the emitter

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Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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fT Min (MHz)

PTM Max (W)

Reference Price

ECH8102-TL-H

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

SOT-28 FL / ECH-8

318BF

1

260

REEL

3000

N

PNP

Low VCE(sat)

0.135

12

30

30

6

0.85

-

200

560

140

1.6

Price N/A

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Reliability Data

Die Related Summary Data

Device: ECH8102-TL-H

Equivalent to wafer fab process: SST

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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