General Purpose and Low VCE(sat) Transistors | D45H11

Power Bipolar Transistor, PNP, 10 A, 80 V

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Overview

These series of plastic, NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.

  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 1.0 V (Max) @ 8.0 A
  • Fast Switching Speeds
  • Complementary Pairs Simplifies Designs
  • Pb-Free Packages are Available

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MSL Temp (°C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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PTM Max (W)

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D45H11G

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CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

PNP

General Purpose

1

10

80

-

5

1.5

-

40

-

-

50

$0.3117

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Reliability Data

Die Related Summary Data

Device: D45H11G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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