General Purpose and Low VCE(sat) Transistors | BUX85

2.0 A, 450 V 50 W NPN Bipolar Power Transistor

Lifetime

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Overview

The Bipolar Power Transistor is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, and motor control systems.

  • VCEO(sus) 450 V
  • VCES(sus) 1000 V
  • Fall time = 0.3 ms (typ) at IC = 1.0 A
  • VCE(sat) = 1.0 V (max) at IC = 1.0 A, IB = 0.2 A
  • Pb-Free Package is Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BUX85

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

-

General Purpose

0.8

2

-

-

-

-

-

30

-

4

50

Price N/A

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BUX85G

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Lifetime

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

NPN

General Purpose

0.8

2

450

1000

5

1.1

-

30

-

4

50

$0.32

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Reliability Data

Die Related Summary Data

Device: BUX85G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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