General Purpose and Low VCE(sat) Transistors | BUH50

4.0 A, 500 V NPN Bipolar Power Transistor

Obsolete

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Overview

This NPN Bipolar Power Transistor is specifically designed to sustain the large inrush current during either the start-up conditions or under a short circuit across the load.

  • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE Fast Switching
  • Motorola "6SIGMA" Philosophy Provides Tight and Reproductible Parametric Distributions
  • Specified Dynamic Saturation Data
  • Full Characterization at 125 °C
  • Pb-Free Package is Available

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Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

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BUH50

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Obsolete

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CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

-

General Purpose

-

4

-

-

-

-

-

7

-

4

50

Price N/A

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BUH50G

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

NPN

General Purpose

-

4

500

-

-

-

-

7

-

4

50

Price N/A

More Details

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