General Purpose and Low VCE(sat) Transistors | BU406

NPN Bipolar Power Transistor

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Overview

This Bipolar Power Transistor is a voltage, high speed transistor for horizontal deflection output stages of TVs and CRTs.

  • High Voltage: VCEV = 330 or 400 V
  • Fast Switching Speed: tf = 750 ns (max)
  • Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A
  • Packaged in Compact JEDEC TO-220AB
  • Pb-Free Package is Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BU406G

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CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

Y

NPN

General Purpose

1

7

200

400

6

1.2

-

-

-

10

60

$0.59

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Reliability Data

Die Related Summary Data

Device: BU406G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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