General Purpose and Low VCE(sat) Transistors | BD243C

6.0 A, 100 V NPN Bipolar Power Transistor

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Overview

The 6 A, 100 V PNP Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications. BD243B, BD243C (NPN); BD244B, BD244C (PNP) are complementary devices.

  • Collector - Emitter Saturation Voltage -
    VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
  • Collector Emitter Sustaining Voltage -
    VCEO(sus) = 80 Vdc (Min) BD243B, BD244B
    VCEO(sus) = 100 Vdc (Min) - BD243C, BD244C
  • High Current Gain Bandwidth Product
    fT = 3.0 MHz (Min) @ IC = 500 mAdc
  • Compact TO-220 AB Package
  • Pb-Free Packages are Available

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MSL Temp (°C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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fT Min (MHz)

PTM Max (W)

Reference Price

BD243CG

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Active

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

Y

NPN

General Purpose

1.5

6

100

100

5

-

2

20

-

3

65

$0.4805

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Reliability Data

Die Related Summary Data

Device: BD243CG

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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