General Purpose and Low VCE(sat) Transistors | BD241C

3.0 A, 100 V, 40 W NPN Bipolar Power Transistor

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Overview

The 3 A, 100V PNP Bipolar Power Transistor designed for use in general purpose amplifier and switching applications. BD241C (NPN), BD242B (PNP) and BD242C (PNP) are complementary devices.

  • Collector-Emitter Saturation Voltage -
    VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc
  • Collector-Emitter Sustaining Voltage -
    VCEO(sus) = 80 Vdc (Min.) BD242B
    = 100 Vdc (Min.) BD241C, BD242C
  • High Current Gain - Bandwidth ProductfT = 3.0 MHz (Min) @ IC = 500 mAdc
  • Compact TO-220 AB Package
  • Pb-Free Packages are Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BD241C

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

NPN

General Purpose

1.2

3

100

-

-

-

-

2.5

-

3

40

Price N/A

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BD241CG

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Active

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

Y

NPN

General Purpose

1.2

3

100

115

5

-

1.8

2.5

-

3

40

$0.3401

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Reliability Data

Die Related Summary Data

Device: BD241CG

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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