General Purpose and Low VCE(sat) Transistors | BD237

2.0 A, 80 V, 25W NPN Bipolar Power Transistor

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Overview

The 2 A, 80 V, 25W NPN Bipolar Power Transistor is designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. BD237 (NPN), BD234 (PNP) and BD238 (PNP) are complementary devices.

  • DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc
  • Pb-Free Packages are Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BD237

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

-

General Purpose

0.6

2

-

-

-

-

-

40

-

3

25

Price N/A

More Details

BD237G

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Active

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

Y

NPN

General Purpose

0.6

2

80

100

5

-

1.3

40

-

3

25

$0.3105

More Details

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Reliability Data

Die Related Summary Data

Device: BD237G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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