General Purpose and Low VCE(sat) Transistors | BD159

0.5 A, 350 V NPN Bipolar Power Transistor

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Overview

This device is designed for power output stages for television, radio, phonograph and other consumer product applications.

  • Suitable for Transformerless, Line-Operated Equipment
  • High Power Dissipation Rating for High Reliability
  • Pb-Free Package is Available

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Product services, tools and other useful resources related to BD159

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Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BD159G

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Last Shipments

Similar Products
CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

-

0.5

350

375

5

-

-

30

240

-

20

Price N/A

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Reliability Data

Die Related Summary Data

Device: BD159G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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