General Purpose and Low VCE(sat) Transistors | NSVT1418L

Bipolar Transistor -160V -1A Low VCE(sat) PNP Single

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Overview

This device is biplolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC-Q101 qualified and PPAP capable.

  • Load Switch
  • Lighting
  • Infotainment

  • Automotive Electronic Control Units
  • Automotive Telematics

  • Large Current Capacitance
  • Low Collector to Emitter Saturation Voltage
  • High Speed Switching
  • High Allowable Power Dissipation
  • AEC-Q101 Qualified and PPAP Capable

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MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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fT Min (MHz)

PTM Max (W)

Reference Price

NSVT1418LT1G

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CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

3000

Y

PNP

Low VCE(sat)

0.13

1

160

180

6

1.2

~NA~

100

400

~NA~

0.42

$0.1725

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Reliability Data

Die Related Summary Data

Device: NSVT1418LT1G

Equivalent to wafer fab process: SSD

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SSD

0

6889897810

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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