General Purpose and Low VCE(sat) Transistors | NST857BF3T5G

PNP Bipolar Transistor

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Overview

The PNP Bipolar Transistor is a spin-off of our popular SOT23, SOT323, SOT563, SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT 1123 surface mount package. This device is ideal for low power surface mount applications, where board space is at a premium.

  • PNP General Purpose Transistor

  • hFE, 220-475
  • Low VCE(sat), <-0.3 V
  • Reduces Board Space
  • This is a Pb-Free Device

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MSL Temp (°C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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PTM Max (W)

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NST857BF3T5G

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CAD Model

Pb

A

H

P

SOT-1123-3

524AA

1

260

REEL

8000

Y

PNP

General Purpose

0.7

0.1

45

50

5

0.9

0.82

220

475

100

0.36

$0.0607

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Reliability Data

Die Related Summary Data

Device: NST857BF3T5G

Equivalent to wafer fab process: SST

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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