General Purpose and Low VCE(sat) Transistors | NSS12600CF8

12 V, 6.0 A, Low VCE(sat) PNP Transistor ChipFET

Obsolete

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Overview

Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays

  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NSS12600CF8T1G

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Obsolete

CAD Model

Pb

A

H

P

ChipFET-8

1206A-03

1

260

REEL

3000

N

PNP

Low VCE(sat)

0.06

-

12

-

-

-

-

250

-

100

2.75

Price N/A

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