General Purpose and Low VCE(sat) Transistors | MJE253

4.0 A, 100 V PNP Bipolar Power Transistor

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Overview

The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.

  • High Collector-Emitter Sustaining Voltage -
    VCEO(sus) = 100 Vdc (Min) MJE243, MJE253
  • High DC Current Gain @ IC = 200 mAdc
    hFE = 40-200
    hFE = 40-120 - MJE243, MJE253
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
  • High Current Gain Bandwidth Product -
    fT = 40 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakages
    ICBO = 100 nAdc (Max) @ Rated VCB
  • Pb-Free Packages are Available

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Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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fT Min (MHz)

PTM Max (W)

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MJE253

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

PNP

General Purpose

0.6

4

100

-

-

-

-

40

180

40

15

Price N/A

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MJE253G

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Active

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

Y

PNP

General Purpose

0.6

4

100

100

7

1.8

1.5

40

180

40

15

$0.2808

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Reliability Data

Die Related Summary Data

Device: MJE253G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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