General Purpose and Low VCE(sat) Transistors | KSB1151

PNP Epitaxial Silicon Transistor

Lifetime

Datasheet

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Overview

  • This product is general usage and suitable for many different applications.

  • Low Collector-Emitter Saturation Voltage
  • Large Collector Current
  • High Power Dissipation: PC= 1.3 W (Ta=25°C)
  • Complement to KSD1691

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Product services, tools and other useful resources related to KSB1151

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSB1151YS

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Lifetime

Similar Products
CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

BLKBG

2000

N

PNP

General Purpose

0.3

5

60

60

7

1.2

-

160

320

-

1.3

$0.3304

More Details

KSB1151YSTU

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Lifetime

Similar Products
CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

TUBE

1920

N

PNP

General Purpose

0.3

5

60

60

7

1.2

-

160

320

-

1.3

$0.3612

More Details

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Reliability Data

Die Related Summary Data

Device: KSB1151YS

Equivalent to wafer fab process: TM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TM

21

1953855815

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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