General Purpose and Low VCE(sat) Transistors | 2N6520T

High Voltage PNP Bipolar Junction Transistor

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Overview

The High Voltage PNP Bipolar Junction Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

  • High voltage

  • Power Supplies

  • High blocking voltage,VCE0 = 350 V
  • Pb-Free Package

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

2N6520TA

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Active

CAD Model

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

N

PNP

General Purpose

0.3

0.5

350

350

5

0.75

2

30

200

40

0.625

$0.0409

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Reliability Data

Die Related Summary Data

Device: 2N6520TA

Equivalent to wafer fab process: SST

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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