General Purpose and Low VCE(sat) Transistors | 2N6437

High-Power PNP Silicon Transistors

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Overview

. . . designed for use in industrial-military power amplifier and switching circuit applications.

  • High Collector-Emitter Sustaining Voltage
    VCEO(sus) = 100 Vdc (Min) for 2N6437
    = 120 Vdc (Min) for 2N6438
  • High DC Current Gain
    hFE = 20-80 @ IC = 10 Adc
    = 12 (Min) @ IC = 25 Adc
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
  • Fast Switching Times @ IC = 10 Adc
    tr = 0.3 µs (Max)
    ts = 1.0 µs (Max)
    tf = 0.25 µs (Max)
  • Complement to NPN 2N6339 thru 2N6341

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