General Purpose and Low VCE(sat) Transistors | 2N6288

7.0 A, 30 V NPN Bipolar Power Transistor

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Overview

The Power 7A 70 V Bipolar NPN Transistor is designed for use in general-purpose amplifier and switching applications.

  • DC Current Gain Specified to 7.0 Amperes
    hFE = 30-150 @ IC
    hFE = 3.0 Adc 2N6111, 2N6288
    hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices
  • Collector-Emitter Sustaining Voltage
    VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288
    VCEO(sus) = 50 Vdc (Min) - 2N6109
    VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292
  • High Current Gain Bandwidth Product
    fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92
    fT = 10 MHz (Min) @ IC = 500 mAdc - 2N6107, 09, 11
  • TO-220AB Compact Package
  • Pb-Free Packages are Available

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Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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PTM Max (W)

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2N6288

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

-

General Purpose

3.5

7

-

-

-

-

-

30

150

4

40

Price N/A

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2N6288G

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Last Shipments

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

NPN

General Purpose

3.5

7

30

40

5

3.5

3

30

150

4

40

Price N/A

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Reliability Data

Die Related Summary Data

Device: 2N6288G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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