General Purpose and Low VCE(sat) Transistors | 2N5190

4.0 A, 40 V NPN Bipolar Power Transistor

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Overview

The Power 4 A, 80 V Bipolar NPN Transistors is for use in power amplifier and switching circuits. This transistor has excellent safe area limits and is a complement to PNP 2N5194, 2N5195

  • Pb-Free Packages are Available

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MSL Temp (°C)

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Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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2N5190

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

-

General Purpose

0.6

4

-

-

-

-

-

25

100

2

40

Price N/A

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2N5190G

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Active

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

0.6

4

40

40

5

-

1.2

25

100

2

40

$0.3423

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Reliability Data

Die Related Summary Data

Device: 2N5190G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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