General Purpose and Low VCE(sat) Transistors | 2N4922

Medium Power NPN Bipolar Power Transistor

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Overview

The Power 3 A, 80 V Bipolar NPN Transistor is designed for driver circuits, switching and amplifier applications.

  • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
  • Excellent Power Dissipation - PD = 30 W @ TC = 25°C
  • Excellent Safe Operating Area
  • Gain Specified to IC = 1.0 Amp
  • Complement of PNP 2N4918, 2N4919, 2N4920
  • Pb-Free Packages are Available

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Package Type

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MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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2N4922

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

0.6

1

60

-

-

-

-

30

150

3

30

Price N/A

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2N4922G

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Active

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

0.6

1

60

60

5

1.3

1.3

30

150

3

30

$0.3189

More Details

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Reliability Data

Die Related Summary Data

Device: 2N4922G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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