General Purpose and Low VCE(sat) Transistors | 2N3055A

15 A, 60 V NPN Bipolar Power Transistor

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Overview

The Bipolar Power Transistor is designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters, inverters or for inductive loads requiring higher safe operating area than the 2N3055.

  • Current-Gain - Bandwidth-Product @ IC = 1.0 Adc
    fT = 0.8 MHz (Min) - NPN
    fT = 2.2 MHz (Min) - PNP
  • Safe Operating Area - Rated to 60 V and 120 V, Respectively
  • Pb-Free Packages are Available

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VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

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VEBO (V)

VBE(sat) (V)

VBE(on) (V)

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2N3055AG

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Active

CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

N

NPN

General Purpose

1.1

15

60

100

7

-

0.7

10

70

2.5

115

$3.2181

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Reliability Data

Die Related Summary Data

Device: 2N3055AG

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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